Samsung First to Mass Produce 40nm-Based 2Gb DDR3 Chips

Samsung is the first developer of computer components that will being mass production of the 2Gb DDR3 memory chips based on the 40 nanometer technology.
In its latest press announcement, the company specifies that the time interval of seven months between the development of the new memory chips and their mass production provided OEMs enough time for optimizing their systems faster.

The next-generation computer systems equipped with the new memory technology will enable 60% increased production productivity compared to those using the 50 nanometer technology.
Samsung will deliver 16GB, 8GB and 4GB RDIMM memory modules destined to server systems, and unregistered in-line memory modules, known as UDIMMs, for workstations and desktop computers, while notebook computers using 4GB memory will be equipped with Samsung’s small outline dual in-line memory modules.

The 2Gb chips fit high-density high-performance applications requiring an energy-efficient solution, and the data rate reaches 1.6 Gigabits per second at 1.35 Volts, meaning twice the speed of 800Mbps 1Gb dual-die modules.
By 2010, the 2Gb DDR3 chips will become the mainstream DDR3 DRAM module, and by 2012 they will cover 82% of this market.

“We see market adoption to DDR3 picking up steam and are accommodating that with early entry of 2Gb DDR3 using the most efficient DRAM manufacturing technology available today,” said Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc. “This will set the pace for a new standard in premium, eco-friendly DRAM solutions offering the most advanced, low power RDIMM for servers anywhere.”

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